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ZXTN25015DFH 15V, SOT23, NPN medium power transistor
Summary
BVCEX > 30V BVCEO > 15V BVECO > 4.5V IC(cont) = 5A VCE(sat) < 40 mV @ 1A RCE(sat) = 25 m PD = 1.25W Complementary part number ZXTP25015DFH
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
C
B
Features
* * * High power dissipation SOT23 package High gain Low saturation voltage
E
Applications
* * * * LED driving DC-DC converters MOSFET and IGBT gate driving Motor drive
E C B Pinout - top view
Tape width (mm) 8 Quantity per reel 3,000
Ordering information
Device ZXTN25015DFHTA Reel size (inches) 7
Device marking
1A8
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ZXTN25015DFH
Absolute maximum ratings
Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current(c) Peak pulse current Power dissipation at Tamb = 25C(a) Linear derating factor Power dissipation at Tamb = 25C(b) Linear derating factor Power dissipation at Tamb = 25C(c) Linear derating factor Power dissipation at Tamb = 25C(d) Linear derating factor Operating and storage temperature range Tj, Tstg PD PD PD Symbol VCBO VCEX VCEO VECO VEBO IC ICM PD Limit 40 30 15 4.5 7 5 15 0.73 5.84 1.05 8.4 1.25 9.6 1.81 14.5 - 55 to 150 Unit V V V V V A A W mW/C W mW/C W mW/C W mW/C C
Thermal resistance
Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(c) Junction to ambient(d) Symbol R JA R JA R JA R JA Limit 171 119 100 69 Unit C/W C/W C/W C/W
NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper, in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper, in still air conditions. (d) As (c) above measured at t<5secs.
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ZXTN25015DFH
Characteristics
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ZXTN25015DFH
Electrical characteristics (at Tamb = 25C unless otherwise stated)
Parameter Collector-emitter breakdown voltage Collector-emitter breakdown voltage (reverse blocking) Collector-emitter breakdown voltage (reverse blocking) Collector cut-off current Symbol BVCEO BVECX Min. 15 6 Typ. 22 8 Max. Unit Conditions V V IC = 10mA (*) IE = 100 A, RBC < 1k or 0.25v > VBC > -0.25V IE = 100 A, IE = 100 A VCB = 40V VCB = 40V, Tamb= 100C VCE = 30V; RBE < 1k or -1V < VBE < 0.25V VEB = 5.6V IC = 1A, IB = 100mA(*) IC = 1A, IB = 10mA(*) IC = 2A, IB = 20mA(*) IC = 5A, IB = 500mA(*) IC = 5A, IB = 100mA(*) IC = 5A, IB = 500mA(*) IC = 5A, VCE = 2V(*) IC = 10mA, VCE = 2V(*) IC = 2A, VCE = 2V(*) IC = 5A, VCE = 2V(*) IC = 15A, VCE = 2V(*) MHz IC = 50mA, VCE = 10V f = 50MHz 30 pF ns ns ns ns
2%.
BVECO
4.5 7
5.3 8.2 <1 50 20 100
V V nA A nA
Emitter-base breakdown voltage BVEBO ICBO
Collector-emitter cut-off current ICEX
Emitter cut-off current Collector-emitter saturation voltage
IEBO VCE(sat)
<1 30 60 90 125 160
50 40 80 125 155 215 1090 900 900
nA mV mV mV mV mV mV mV
Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio
VBE(sat) VBE(on) hFE 300 300 150 25
990 805 450 400 275 40 240 22.7 16 41 148 23
300 s; duty cycle
Transition frequency Output capacitance Delay time Rise time Storage time Fall time
fT COBO t(d) t(r) t(s) t(f)
150
VCB = 10V, f = 1MHz(*) VCC = 10V. IC = 3A, IB1 = IB2= 50mA.
NOTES: (*) Measured under pulsed conditions. Pulse width
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ZXTN25015DFH
Typical characteristics
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ZXTN25015DFH
Package outline - SOT23
L H N D 3 leads G
M
B
A
C K
F
Dim. A B C D F G
Millimeters Min. 2.67 1.20 0.37 0.085 Max. 3.05 1.40 1.10 0.53 0.15
Inches Min. 0.105 0.047 0.015 0.0034 Max. 0.120 0.055 0.043 0.021 0.0059
Dim. H K L M N -
Millimeters Min. 0.33 0.01 2.10 0.45 Max. 0.51 0.10 2.50 0.64 -
Inches Max. 0.013 0.0004 0.083 0.018 Max. 0.020 0.004 0.0985 0.025 -
0.95 NOM
0.0375 NOM
1.90 NOM
0.075 NOM
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com
Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com
Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
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